Now showing items 1-1 of 1
Effect Of Gate Structures On The Dc And Rf Performance Of Algan/Gan Hemts
(Iop Publishing Ltd, 2018)
This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 mu m drain-to-source spacing, ...