Gate Uzunluğunun Gan Hemt Aygıtlarda Güç Performansına Etkisi
xmlui.mirage2.itemSummaryView.MetaDataShow full item record
This work has combined epitaxial growth, fabrication and characterization efforts to develop a GaN based high electron mobility transistors (HEMT). GaN HEMT epitaxial samples have been grown by using metal organic chemical vapor deposition (MOCVD) technique. Photolüminesans (PL), optical transmission, high resolution XRD (HR-XRD), Atomic Force Microscopy (AFM) and Hall Effect measurement systems were used for structural analysis of the grown epitaxial samples. In order to see the effect of the gate length (Lg) on RF power performance of HEMT devices with four different gate lengths (Lg) were fabricated on four different samples that have the dimension of 12x12 mm2. The gate length (Lg) of HEMT devices on four different samples is chosen as 300 nm, 600 nm, 800 nm and 1000 nm respectively. Transmission Line Model (TLM), DC, RF and Power measurements were carried out for DC and RF characterization of the fabricated samples. It was observed that changing of Lg affect the power performance of the HEMT devices, as Lg increases, the RF output power performance of the HEMT devices also increases with acceptable decrease in small signal gain.