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Effect of Gate Structures on The Dc and Rf Performance of Algan/Gan Hemts
(Iop Publishing Ltd, 2018)
This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 mu m drain-to-source spacing, ...