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Effect of Gate Structures on The Dc and Rf Performance of Algan/Gan Hemts
(Iop Publishing Ltd, 2018)
This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 mu m drain-to-source spacing, ...
Silent Enhancement of Sers Signa without Increasing Hot Spot Intensities
(Walter De Gruyter Gmbh, 2018)
Plasmonic nanostructures enhance nonlinear response, such as surface enhanced Raman scattering (SERS), by localizing the incident field into hot spots. The localized hot spot field can be enhanced even further when linear ...