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Gate Uzunluğunun Gan Hemt Aygıtlarda Güç Performansına Etkisi
(Fen Bilimleri Enstitüsü, 2014)
This work has combined epitaxial growth, fabrication and characterization efforts to develop a GaN based high electron mobility transistors (HEMT). GaN HEMT epitaxial samples have been grown by using metal organic chemical ...