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GaN İnce Filmlerin Esr Spektroskopisi İle İncelenmesi
(Fen Bilimleri Enstitüsü, 2018)
In this thesis; it is aimed to characterize GaN sample which has been widely used nowadays, especially in electronics sector. GaN epitaxial structures have been produced with different contents of carbon dopants by ...
Gate Uzunluğunun Gan Hemt Aygıtlarda Güç Performansına Etkisi
(Fen Bilimleri Enstitüsü, 2014)
This work has combined epitaxial growth, fabrication and characterization efforts to develop a GaN based high electron mobility transistors (HEMT). GaN HEMT epitaxial samples have been grown by using metal organic chemical ...